MMDT4413_15 Datasheet, PDF (2/8 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistors

MMDT4413
Absolute Maximum Ratings: NPN, 4401 Type (Q₁) (@T_A = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
60
40
6
600
Unit
V
V
V
mA
Absolute Maximum Ratings: PNP, 4403 Type (Q₂) (@T_A = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
-40
-40
-5
-600
Unit
V
V
V
mA
Thermal Characteristics – Total Device (@T_A = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5) Total Device
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
R_JA
T_J, T_STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Note:
5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
Thermal Characteristics – Total Device
250
200
150
100
50
0
0
40
80
120
160
200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
MMDT4413
Document number: DS30121 Rev. 11 - 2
2 of 8
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August 2013
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