MMBT4401_15 Datasheet, PDF (5/7 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

1,000
T_A = 125°C
100
T_A = -25°C
T_A = +25°C
10
V_CE = 1.0V
1
0.1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
1.0
0.9 ^{VCE = 5V}
0.8
T_A = -50°C
0.7
T_A = 25°C
0.6
0.5
T_A = 150°C
0.4
0.3
0.2
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
V_CE = 5V
100
10
1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product vs. Collector Current
0.5
I_C
I_B
=
10
0.4
0.3
0.2
MMBT4401
T_A = 25°C
T_A = 150°C
0.1
T_A = -50°C
0
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Figure 2 Collector-Emitter Saturation Voltage
vs. Collector Current
100
30
20
C_ibo
10
5
C_obo
1
0.1
1.0
10
50
V_R, REVERSE VOLTAGE (V)
Figure 4 Typical Capacitance Characteristics
2.0
1.8
I_C = 1mA
I_C = 30mA
1.6
I_C = 10mA
I_C = 100mA
1.4
1.2
I_C = 300mA
1.0
0.8
0.6
0.4
0.2
0
0.001 0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
MMBT4401
Document Number: DS30039 Rev. 17 - 2
5 of 7
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