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| MMBT4401_15 Datasheet, PDF (4/7 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors | |||
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MMBT4401
Electrical Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage(Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Symbol
Min
BVCBO
60
BVCEO
40
BVEBO
6.0
ICEX
ï¾
IBL
ï¾
20
40
hFE
80
100
40
Collector-Emitter Saturation Voltage
VCE(sat)
ï¾
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
VBE(sat)
Ccb
Ceb
hie
hre
hfe
hoe
0.75
ï¾
ï¾
ï¾
1.0
0.1
40
1.0
Current Gain-Bandwidth Product
fT
250
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
ï¾
tr
ï¾
ts
ï¾
tf
ï¾
Note: 10. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%.
Max
ï¾
ï¾
ï¾
100
100
ï¾
ï¾
ï¾
300ï
ï¾
0.40
0.75
0.95
1.2
6.5
30
15
8.0
500
30
ï¾
15
20
225
30
Unit
Test Condition
V
IC = 100μA, IE = 0
V
IC = 10.0mA, IB = 0
V
IE = 100μA, IC = 0
nA
VCE = 35V, VEB(OFF) = 0.4V
nA
VCE = 35V, VEB(OFF) = 0.4V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
ï¾
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
pF
pF
kâ¦
x 10-4
ï¾
μS
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
ns
VCC = 30V, IC = 150mA,
ns
VBE(off) = 2.0V, IB1 = 15mA
ns
VCC = 30V, IC = 150mA,
ns
IB1 = -IB2 = 15mA
MMBT4401
Document Number: DS30039 Rev. 17 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
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