FZT957 Datasheet, PDF (5/5 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

FZT958
TYPICAL CHARACTERISTICS
1.6
IC/IB=5
IC/IB=20
1.4
1.2
Tamb=25°C
1.0
0.8
0.6
0.4
0.2
0 _0.001
0.01
0.1
1
I+ - Collector Current (Amps)
10 20
VCE(sat) v IC
-55°C
1.6
+25°C
1.4
+175°C
IC/IB=5
1.2
1.0
0.8
0.6
0.4
0.2
0 _0.001
0.01
0.1
1
10 20
I+ - Collector Current (Amps)
VCE(sat) v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 _0.001
+100°C
+25°C
-55°C
0.01
0.1
VCE=10V
300
200
100
1
10 20
I+ - Collector Current (Amps)
hFE v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 _0.001
-55°C
+25°C
+100°C
+175°C
0.01
0.1
VCE=10V
1
10 20
I+ - Collector Current (Amps)
VBE(on) v IC
-55°C
1.6
+25°C
+100°C
1.4
+175°C
IC/IB=10
1.2
1.0
0.8
0.6
0.4
0.2
0 _0.001
0.01
0.1
1
10 20
I+ - Collector Current (Amps)
VBE(sat) v IC
10
Single Pulse Test Tamb=25C
1
DC
1s
0.1 100ms
10ms
1ms
100µs
0.01
1
10
100
1000
VCE - Collector Voltage (V)
Safe Operating Area
3 - 293