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| FZT957 Datasheet, PDF (4/5 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | |||
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FZT958
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -400 -600
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER -400 -600
V
IC=-1µA, RB â¤1kâ¦
Collector-Emitter
Breakdown Voltage
V(BR)CEO -400 -550
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -6
-8
V
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
ICER
R â¤1kâ¦
IEBO
VCE(sat)
VBE(sat)
-50 nA
-1
µA
-50 nA
-1
µA
-10 nA
-100 -150 mV
-150 -200 mV
-340 -400 mV
-830 -950 mV
VCB=-300V
VCB=-300V, Tamb=100°C
VCB=-300V
VCB=-300V, Tamb=100°C
VEB=-6V
IC=-10mA, IB=-1mA*
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
IC=-500mA, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-725 -840 mV IC=-500mA, VCE=-10V*
Static Forward
Current Transfer Ratio
Transition Frequency
hFE
100 200
100 200 300
10 20
IC=-10mA, VCE=-10V*
IC=-500mA, VCE=-10V*
IC=-1A, VCE=-10V*
fT
85
MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
19
pF
Switching Times
ton
toff
104
ns
2400
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VCB=-20V, f=1MHz
IC=-500mA, IB1=-50mA
IB2=50mA, VCC=-100V
3 - 292
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