DSS5240T_15 Datasheet, PDF (5/7 Pages) Diodes Incorporated – 40V PNP LOW SATURATION TRANSISTOR IN SOT23

1
I_C/I_B = 10
0.1
0.01
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.001
1
10
100
1,000
10,000
-I_C, COLLECTOR CURRENT (mA)
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
I_C/I_B = 10
0.8
T_A = -55°C
0.6
T_A = 25°C
T_A = 85°C
0.4
T_A = 150°C
0.2
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
DSS5240T
1.2
1.0
V_CE = -2V
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4 _{TA = 85°C}
0.2 ^TA ^{= 150°C}
0
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
100
C_ibo
10
C_obo
1
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Figure 6 Typical Capacitance Characteristics
100
10
V_CE = -10V
f = 100MHz
1
0 10 20 30 40 50 60 70 80 90 100
-I_C, COLLECTOR CURRENT (mA)
Figure 7 Typical Gain-Bandwidth Product
vs. Collector Current
DSS5240T
Document number: DS31591 Rev. 4 - 2
5 of 7
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May 2014
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