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DSS5240T_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 40V PNP LOW SATURATION TRANSISTOR IN SOT23
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Continuous Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Value
-40
-40
-5
-3
-2
-300
DSS5240T
Unit
V
V
V
A
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient Air (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 7)
Thermal Resistance, Junction to Lead (Note 8)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJL
TJ, TSTG
Value
730
600
171
209
75
-55 to +150
Unit
mW
mW
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on minimum recommended pad layout.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS5240T
Document number: DS31591 Rev. 4 - 2
2 of 7
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May 2014
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