DMP1245UFCL Datasheet, PDF (5/7 Pages) Diodes Incorporated – 12V P-CHANNEL ENHANCEMENT MODE MOSFET

1.4
1.2
1.0
0.8
0.6
I_D = -1mA
0.4
0.2
I_D = -250µA
0
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
100,000
10,000
T_A = 150°C
T_A = 125°C
1,000
T_A = 85°C
100
10
T_A = 25°C
1
0
2
4
6
8
10
12
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Drain-Source Leakage Current vs. Voltage
8
6
V_DS = -10V
I_D = -1A
4
2
A Product Line of
Diodes Incorporated
DMP1245UFCL
20
16
12
T_A = 25°C
8
4
0
0.4
2,500
0.6
0.8
1
1.2
V_SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
2,000
C_ISS
1,500
1,000
500
0
0
C_OSS
C_RSS
4
8
12
16
20
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
0
0
5
10
15
20
25
Q_g, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
30
5 of 7
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November 2011
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