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DMP1245UFCL Datasheet, PDF (1/7 Pages) Diodes Incorporated – 12V P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
V(BR)DSS
-12V
RDS(on) max
29mΩ @VGS = -4.5V
45mΩ @VGS = -2.5V
60mΩ @VGS = -1.8V
100mΩ @VGS = -1.5V
ID max
-6.6 A
-5.3 A
-4.6 A
-3.5 A
Application
This device provides a high performance, low RDS(ON) P channel
MOSFETs in the thermally and space efficient X1-DFN1616-6
package. The low RDS(ON) of this MOSFET ensures conduction
losses are kept making it ideal for use as a:
• Battery disconnect switch
• Load switch for power management functions
X1-DFN1616-6
Type E
A Product Line of
Diodes Incorporated
DMP1245UFCL
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Typical off board profile of 0.5mm - ideally suited for thin
applications
• Low RDS(ON) – minimizes conduction losses
• PCB footprint of 2.56mm2
• 3kV ESD Protected Gate – protected against human borne
ESD
• “Lead-Free”, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: X1-DFN1616-6 Type E
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Lead Free Plating (NiPdAu Finish over Copper leadframe).
• Terminals: Solderable per MIL-STD-202, Method 208
• Weight: 0.04 grams (approximate)
Pin 1
Drain
Top View
Bottom View
Gate
Gate
Protection
Diode
Source
Device symbol
Ordering Information (Note 3)
Product
DMP1245UFCL-7
Marking
P5
Reel size (inches)
7
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Tape width (mm)
8
Top View
Pin-Out
Quantity per reel
3,000
Marking Information
P5
YM
P5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
Feb
1
2
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
2012
Z
Mar
3
2013
A
Apr
May
4
5
2014
B
Jun
Jul
6
7
1 of 7
www.diodes.com
2015
C
Aug
Sep
8
9
2016
D
Oct
O
2017
E
Nov
Dec
N
D
November 2011
© Diodes Incorporated