BCP5316Q_15 Datasheet, PDF (5/6 Pages) Diodes Incorporated – 80V PNP MEDIUM POWER TRANSISTORS IN SOT223

1.2
1.0
0.8
T_A = -55°C
0.6 _{TA = 25°C}
T_A = 85°C
0.4
T_A = 150°C
0.2
I_C / I_B = 10
0
0.001
0.01
0.1
1
10
-I_C, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
160
140
f = 1MHz
120
100
80
C_ibo
60
40
20
C_obo
0
0
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
BCP5316Q
300
250
200
150
100
50
V_CE = -5V
f = 100MHz
0
0
20
40
60
80
100
-I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
b1
Q
C
e1
b
e
A
A1
Gauge
Plane
0.25
Seating
Plane
7°
E E1
L
0°-10°
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b 0.60 0.80 0.70
b1 2.90 3.10 3.00
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e
-
- 4.60
e1 -
- 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
BCP5316Q
Datasheet Number: DS36980 Rev. 2 - 2
5 of 6
www.diodes.com
May 2014
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