BCP5316Q_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 80V PNP MEDIUM POWER TRANSISTORS IN SOT223

BCP5316Q
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
BV_CBO
BV_CEO
BV_EBO
Min
-100
-80
-5
Collector Cut-off Current
I_CBO
—
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
I_EBO
—
25
h_FE
100
25
V_CE(sat)
—
V_BE(on)
—
Transition Frequency
fT
150
Output Capacitance
Cobo
—
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Typ
Max
Unit
Test Condition
—
—
V I_C = -100µA
—
—
V I_C = -10mA
—
—
V I_E = -10µA
—
-0.1
-20
µA ^{VCB = -30V}
V_CB = -30V, T_A = +150°C
—
-20
nA V_EB = -4V
—
—
I_C = -5mA, V_CE = -2V
—
250
— I_C = -150mA, V_CE = -2V
—
—
I_C = -500mA, V_CE = -2V
—
-0.5
V I_C = -500mA, I_B = -50mA
—
-1.0
V I_C = -500mA, V_CE = -2V
—
—
MHz ^{IC = -50mA, VCE = -10V}
f = 100MHz
—
25
pF V_CB = -10V, f = 1MHz
1.0
500
I_B = 10mA
0.8
I_B = 8mA
400
V_CE = -5V
I_B = 6mA
T_A = 150°C
0.6
300
I_B = 4mA
T_A = 85°C
0.4
200 ^TA ^{= 25°C}
I_B = 2mA
0.2
100
T_A = -55°C
0
0
1
2
3
4
5
-V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.001
0.01
0.1
1
10
-I_C, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
0.5
1.0
0.8
T_A = -55°C
0.6 _{TA = 25°C}
0.4 ^{TA = 85°C}
T_A = 150°C
0.2
V_CE = -2V
0
0.001
0.01
0.1
1
-I_C, COLLECTOR CURRENT(A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
BCP5316Q
Datasheet Number: DS36980 Rev. 2 - 2
10
4 of 6
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0.4
0.3
T_A = 150°C
0.2
T_A = 85°C
0.1
T_A = 25°C
T_A = -55°C
0
0.001
0.01
0.1
1
10
-I_C, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
May 2014
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