ZXTP558L_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 400V PNP High Voltage Transistor in TO92L

A Product Line of
Diodes Incorporated
ZXTP558L
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain (Note 8)
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
Output Capacitance (Note 8)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
hFE
VCE(sat)
VBE(on)
VBE(sat)
Cobo
Min
-400
-400
-7



100
100





Current Gain-Bandwidth Product
fT
50
Turn-On Time
Turn-Off Time
ton

toff

Note:
8. Measured under pulsed conditions. Pulse width ≤ 300μs; Duty cycle ≤ 2%.
Typ














95
1600
Max



-100
-100
-100

300
-0.2
-0.5
-0.9
-0.9
5



Unit
V
V
V
nA
nA
nA


V
V
V
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -1mA
IE = -100µA
VCB = -320V
VCE = -320V
VBE = -5V
IC = -1mA, VCE = -10V
IC = -50mA
IC = -20mA, IB = -2mA
IC = -50mA, IB = -6mA
VCE = -10V, IC = -50mA
IC = -50mA, IB = -5mA
VCB = -20V, f = 1.0MHz
VCE = -20V, IC = -10mA,
f = 20MHz
VCE = -100V, IC = -50mA
IB1 = 5mA, IB2 = -10mA
ZXTP558L
Document number: DS32186 Rev. 3 - 2
4 of 7
www.diodes.com
September 2014
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