ZXTP558L_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 400V PNP High Voltage Transistor in TO92L

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
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Diodes Incorporated
ZXTP558L
Value
Unit
-400
V
-400
V
-7
V
-200
mA
-500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
Symbol
PD
R_θJA
R_θJL
TJ, TSTG
Value
1
125
50
-55 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit JEDEC Class
V
3B
V
C
Notes:
5. For the through-hole device mounted vertically, in still air conditions, with the lead length 6mm from the bottom of package to the board.
6. Thermal resistance from junction to solder-point (2mm from the bottom of package along the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP558L
Document number: DS32186 Rev. 3 - 2
2 of 7
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September 2014
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