ZXTP25140BFHQ Datasheet, PDF (4/7 Pages) Diodes Incorporated – 140V PNP MEDIUM POWER TRANSISTOR

ZXTP25140BFHQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Symbol
BVCBO
Min
-180
Collector-Emitter Breakdown Voltage (Forward Blocking)
BVCEX
-180
Collector-Emitter Breakdown Voltage (Base Open) (Note 12)
Emitter-Base Breakdown Voltage
Emitter-Base Breakdown Voltage (Reverse Blocking) (Note 12)
Collector-Base Cutoff Current
BVCEO
BVEBO
BVECO
ICBO
-140
-7
-7
-
-
Collector-Emitter Cutoff Current
ICEX
Emitter-Base Cutoff Current
Static Forward Current Transfer Ratio (Note 12)
Collector-Emitter Saturation Voltage (Note 12)
IEBO
-
100
hFE
100
20
-
-
VCE(sat)
-
Base-Emitter Saturation Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
-
VBE(sat)
-
VBE(on)
-
Cobo
-
Transition Frequency
fT
-
Turn-on time
Turn-off time
ton
-
toff
-
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Typ
-205
-205
-160
-8.2
-8.5
< -1
-
-
< -1
200
190
30
-40
-110
-90
-170
-180
-850
-800
10
75
102
854
Max
-
-
-
-
-
-50
-20
-100
-50
300
-
-
-50
-135
-110
-230
-260
-950
-900
-
-
-
-
Unit
V
V
V
V
V
nA
µA
nA
nA
-
mV
mV
mV
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -100µA
RBE <1kΩ or
-0.25V < VBE < 1V
IC = -10mA
IE = -100µA
IE = -100µA
VCB = -144V
VCB = -144V, Tamb = +100°C
VCE = -144V;
RBE <1kΩ or
-0.25V < VBE < 1V
VEB = -5.6V
IC = -10mA, VCE = -2V
IC = -0.1A, VCE = -2V
IC = -1A, VCE = -2V
IC = -0.1A, IB = -10mA
IC = -0.1A, IB = -2mA
IC = -0.5A, IB = -50mA
IC = -0.5A, IB = -25mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -2V
VCB = -20V, f = 1MHz
VCE = -20V, IC = -10mA,
f = 20MHz
VCC = -20V, IC = -100mA,
IB1 = IB2= -10mA
ZXTP25140BFHQ
Document Number: DS38587 Rev. 1 - 2
4 of 7
www.diodes.com
January 2016
© Diodes Incorporated