ZXTP25140BFHQ Datasheet, PDF (2/7 Pages) Diodes Incorporated – 140V PNP MEDIUM POWER TRANSISTOR

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-collector voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current (Note 5)
Peak Pulse Current
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
ICM
ZXTP25140BFHQ
Value
Unit
-180
V
-180
V
-140
V
-7
V
-7
V
-1
A
-3
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
Symbol
PD
R_JA
R_JL
TJ, TSTG
Value
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
171
119
100
69
74.95
-55 to +150
Unit
W
°C/W
°C/W
°C
Notes:
6. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (4), except the device is surface mounted on 25mm x 25mm with 2 oz copper.
8. Same as note (4), except the device is surface mounted on 50mm x 50mm with 2 oz copper.
9. Same as note (6), except the device is measured at t<5secs.
10. Thermal resistance from junction to solder-point (at the end of the collector lead).
ESD Ratings (Note 11)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes: 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
ZXTP25140BFHQ
Document Number: DS38587 Rev. 1 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated