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| ZXTP25060BFH_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
ZXTP25060BFH
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Symbol
BVCBO
Min
-100
Collector-Emitter Breakdown Voltage (forward blocking)
BVCEX
-100
Collector-Emitter Breakdown Voltage (base open) (Note 9) BVCEO
-60
Emitter- Collector Breakdown Voltage
(Reverse blocking) (Note 9)
BVECO
-7
Emitter-Base Breakdown Voltage
BVEBO
-7
Collector Cutoff Current
-
ICBO
-
Collector emitter Cutoff Current
ICEX
-
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter turn-on Voltage (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
IEBO
-
100
hFE
75
30
VBE(sat)
-
VBE(on)
-
-
-
VCE(sat)
-
-
Transition Frequency
fT
-
Collector Output Capacitance (Note 9)
Turn-on time
Turn-off time
COBO
-
t(on)
-
t(off)
-
Notes: 9. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
Typ Max
-120
-
-120
-
-80
-
-8.6
-
-8.1
-
< -1 -50
-
-20
-
-100
< -1
200
150
60
-940
-830
-45
-100
-70
-175
-50
300
-
-
-1040
-930
-55
-135
-85
-235
250
-
17.6
30
26.5
-
291
-
Unit
V
V
V
Test Condition
IC = -100 µA
IC = -100 µA,
RBE < 1k⦠or -0.25V < VBE < 1V
IC = -10mA
V IE = -100µA
V
nA
µA
nA
nA
-
mV
mV
mV
MHz
pF
ns
ns
IE = -100µA
VCB = -80V
VCB = -80V, TA = 100°C
VCE = -80V,
RBE < 1k⦠or -0.25V < VBE < 1V
VEB = -6V
IC = -10mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -3A, VCE = -2V
IC = -3A, IB = -300mA
IC = -3A, VCE = -2V
IC = -0.5A, IB = -50mA
IC = -0.5A, IB = -10mA
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
IC = -100mA, VCE = -5V,
f = 100MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -500mA,
IB1 = IB2 = -50mA
ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2
4 of 7
www.diodes.com
January 2012
© Diodes Incorporated
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