ZXTP25060BFH_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 60V PNP MEDIUM POWER TRANSISTOR IN SOT23

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (forward blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak pulse Current
Symbol
V_CBO
V_CEX
V_CEO
V_ECO
V_EBO
I_C
I_CM
A Product Line of
Diodes Incorporated
ZXTP25060BFH
Value
Unit
-100
V
-100
V
-60
V
-7
V
-7
V
-3
A
-9
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
0.73
(Note 4)
5.84
Power Dissipation
Linear derating factor
(Note 5)
P_D
(Note 6)
1.05
8.4
W
1.25
9.6
1.81
(Note 7)
14.5
(Note 4)
171
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
R_θJA
119
°C/W
100
(Note 7)
69
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 8)
R_θJL
T_J, T_STG
74.95
-55 to +150
°C/W
°C
Notes:
4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. Same as note (4), except the device is surface mounted on 25mm x 25mm with 2 oz copper.
6. Same as note (4), except the device is surface mounted on 50mm x 50mm with 2 oz copper.
7. Same as note (6), except the device is measured at t<5secs.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTP25060BFH
Document number: DS33374 Rev. 4 - 2
2 of 7
www.diodes.com
January 2012
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