ZXTP25040DFL_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V PNP LOW POWER TRANSISTOR IN SOT23

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Diodes Incorporated
ZXTP25040DFL
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BVCBO
BVCEO
BVEBO
BVECO
ICBO
IEBO
hFE
Min Typ
-45
-75
-40
-65
-7
-8.2
-3
-8.7
-
< -1
-
-
-
< -1
300
450
120
200
15
40
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
-
-
VCE(sat)
-
-
-
VBE(sat)
-
VBE(on)
-
Cobo
-
Transition Frequency
fT
-
Delay Time
Rise Time
Storage Time
Fall Time
t(d)
-
t(r)
-
t(s)
-
t(f)
-
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
-75
-200
-95
-160
-245
-915
-825
17.4
270
34
41
266
53
Max
-
-
-
-
-50
-20
-50
900
-
-
-95
-290
-115
-190
-300
-1000
-900
25
-
-
-
-
-
Unit
V
V
V
V
nA
µA
nA
-
mV
mV
mV
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
IE = -100µA
VCB = -36V
VCB = -36V, Tamb = +100°C
VEB = -5.6V
IC = -10mA, VCE = -2V
IC = -1.5A, VCE = -2V
IC = -3A, VCE = -2V
IC = -0.5A, IB = -20mA
IC = -1A, IB = -20mA
IC = -1A, IB = -100mA
IC = -1.5A, IB = -75mA
IC = -3A, IB = -300mA
IC = -1.5A, IB = -75mA
IC = -1.5A, VCE = -2V
VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 50MHz
VCC = -15V, IC = -750mA,
IB1 = -IB2 = -15mA
ZXTP25040DFL
Document Number: DS33754 Rev. 4 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated