ZXTP25040DFL_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 40V PNP LOW POWER TRANSISTOR IN SOT23

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Diodes Incorporated
ZXTP25040DFL
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Emitter-collector voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current (Note 5)
Base Current
Peak Pulse Current
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
Value
-45
-40
-3
-7
-1.5
-500
-5
Unit
V
V
V
V
A
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP25040DFL
Document Number: DS33754 Rev. 4 - 2
2 of 7
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March 2015
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