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| ZXTP2013Z_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 | |||
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ZXTP2013Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
RÕ
1kâ
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
fT
-140
-140
-100
-7
100
100
25
15
-160
-160
-115
-8.1
Ͻ1
Ͻ1
Ͻ1
-20
-65
-110
-230
-970
-910
250
200
50
30
5
125
-20
-0.5
-20
-0.5
-10
-30
-85
-135
-300
-1060
-1030
300
V IC = -100â®A
V IC = -1â®A, RB Õ
1kâ
V IC = -10mA*
V IE = -100â®A
nA VCB = -100V
â®A VCB = -100V, Tamb=100ÐC
nA VCB = -100V
â®A VCB = -100V, Tamb=100ÐC
nA VEB = -6V
mV IC = -0.1A, IB = -10mA*
mV IC = -1A, IB = -100mA*
mV IC = -2A, IB = -200mA*
mV IC = -4A, IB = -400mA*
mV IC = -4A, IB = -400mA*
mV IC = -4A, VCE = -1V*
IC = -10mA, VCE = -1V*
IC = -1A, VCE = -1V*
IC = -3A, VCE = -1V*
IC = -4A, VCE = -1V*
IC = -10A, VCE = -1V*
MHz IC = 100mA, VCE = 10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
42
pF VCB = -10V, f= 1MHz*
42
ns IC = 1A, VCC = 10V,
540
IB1 = IB2 = 100mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
ISSUE 1 - JUNE 2005
4
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