ZXTP2013Z_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

ZXTP2013Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current^(a)
Peak pulse current
Power dissipation at T_A=25°C ^(a)
Linear derating factor
Power dissipation at TA=25°C ^(b)
Linear derating factor
Operating and storage temperature range
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_C
I_CM
P_D
P_D
T_j, T_stg
LIMIT
-140
-100
-7
-3.5
-10
1.5
12
2.1
16.8
-55 to 150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient^(a)
Junction to ambient^(b)
SYMBOL
R_␪JA
R_␪JA
LIMIT
83
60
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - JUNE 2005
2