ZXTP2012Z_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

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ZXTP2012Z
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Notes 9)
Collector-Emitter Breakdown Voltage (Notes 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
Min
-100
-100
-60
-7
-
Typ
-120
-120
-80
-8.1
< -1
Collector Cutoff Current
Emitter Cutoff Current
DC current transfer Static ratio (Notes 9)
I_CER
R ≤1kΩ
I_EBO
h_FE
-
< -1
-
< -1
100
250
100
200
45
90
10
25
Collector-Emitter Saturation Voltage (Notes 9)
V_CE(sat)
-
Base-Emitter Saturation Voltage (Notes 9)
Base-Emitter Turn-on Voltage (Notes 9)
V_BE(sat)
-
V_BE(on)
-
Transitional Frequency (Notes 9)
f_T
-
Output capacitance
Switching Time
C_obo
-
t_ON
-
t_OFF
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
-14
-50
-75
-160
-950
-840
120
48
39
370
Max
-
-
-
-
-20
-500
-20
-500
-10
300
-20
-65
-110
-215
-1050
-950
-
-
-
Unit
V
V
V
V
nA
nA
nA
nA
nA
mV
mV
mV
MHz
pF
ns
Test Condition
I_C = -100µA
I_C = -1µA, R_B ≤ 1kΩ
I_C = -10mA
I_E = -100µA
V_CB = -80V
V_CB = -80V, T_A = +100°C
V_CB = -80V
V_CB = -80V, T_A = +100°C
V_EB = -6V
I_C = -10mA, V_CE = -1V
I_C = -2A, V_CE = -1V
I_C = -5A, V_CE = -1V
I_C = -10A, V_CE = -1V
I_C = -100mA, I_B = -10mA
I_C = -1A, I_B = -100mA
I_C = -2A, I_B = -200mA
I_C = -5A, I_B = -500mA
I_C = -5A, I_B = -500mA
I_C = -5A, V_CE = -1V
I_C = -100mA, V_CE = -10V,
f = 50MHz
V_CB = -10V, f = 1MHz,
V_CC = -10V, I_C = -1A,
I_B1 = I_B2 = -100mA
ZXTP2012Z
Datasheet Number: DS33713 Rev. 3 - 2
4 of 7
www.diodes.com
October 2012
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