ZXTP2012Z_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

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ZXTP2012Z
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Value
-100
-60
-7
-4.3
-15
Unit
V
V
V
A
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Linear derating factor
Power Dissipation (Note 7)
Linear derating factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
P_D
P_D
R_θJA
R_θJA
R_θJL
T_J,T_STG
Value
1.5
12
2.1
16.8
83
60
3.23
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTP2012Z
Datasheet Number: DS33713 Rev. 3 - 2
2 of 7
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October 2012
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