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| ZXTP2008G Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 30V PNP LOW SATURATION TRANSISTOR IN SOT223 | |||
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ZXTP2008G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
BVCBO
BVCER
BVCEO
BVEBO
ICBO
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
ICER
R < 1kâ
IEBO
VCE(SAT)
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
VBE(SAT)
VBE(ON)
hFE
Transition frequency
fT
-50 -70
V IC = -100â®A
-50 -70
V IC = -1â®A, RB < 1kâ
-30 -40
V IC = -10mA *
-7.0 -8.0
V IE = -100â®A
<1 -20 nA VCB = -40V
-0.5 â®A VCB = -40V, Tamb= 100°C
<1 -20 nA VCB = -40V
-0.5 â®A VCB = -40V, Tamb= 100°C
<1 -10 nA VEB = -6V
-30
-40
-60
-70
-170
-45
-60
-85
-90
-210
mV IC = -0.5A, IB = -20mA *
mV IC = -1A, IB = -100mA *
mV IC = -1A, IB = -20mA *
mV IC = -2A, IB = -200mA *
mV IC = -5.5A, IB = -500mA *
-1030 -1130 mV IC = -5.5A, IB = -500mA *
-900 -1000 mV IC = -5.5A, VCE = -1V *
100 225
100 200 300
70 145
10
20
IC = -10mA, VCE = -1V *
IC = -1A, VCE = -1V *
IC = -5A, VCE = -1V *
IC = -20A, VCE = -1V *
110
IC = -100mA, VCE = -10V
f = 50MHz
Output capacitance
Switching times
COBO
tON
tOFF
83
pF VCB = -10V, f = 1MHz *
43
ns IC = -1A, VCC = -10V,
230
IB1 = IB2 = -100mA
NOTES
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
ISSUE 1 - JUNE 2005
4
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