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ZXTP2008G Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 30V PNP LOW SATURATION TRANSISTOR IN SOT223
ZXTP2008G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current (a)
Peak pulse current
Power dissipation at TA =25°C (a)
Linear derating factor
Power dissipation at TA =25°C (b)
Linear derating factor
Operating and storage temperature range
SYMBOL
BVCBO
BVCEO
BVEBO
IC
ICM
PD
PD
Tj, Tstg
LIMIT
-50
-30
-7
-5.5
-20
3.0
24
1.6
12.8
-55 to 150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
Junction to ambient (b)
R⍜JA
R⍜JA
42
°C/W
78
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - JUNE 2005
2