ZXTP19100CG Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 100V PNP medium transistor

ZXTP19100CG
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BV_CBO
voltage
Collector-Emitter
breakdown voltage
BV_CEO
Collector-Base breakdown BV_CEX
voltage (forward blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECO
Emitter-Base breakdown BV_EBO
voltage
Collector-Base cut-off
current
I_CBO
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Min.
-110
-100
-110
-7
-7
-7
Base-Emitter saturation
voltage
V_BE(sat)
Base-Emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
200
transfer ratio
70
20
Transition frequency
f_T
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
Typ.
-135
-135
-130
-8.3
-8.7
Max.
Unit Conditions
V I_C = -100µA
V _{IC= -10mA} ^(*)
V I_C = -100µA
V I_E = -100µA, R_BC < 1kΩ or
0.25V > V_BC > -0.25V
V I_E = -100µA
-8.3
<1
<1
-100
-100
-180
-220
-890
-840
300
130
28
142
291
23.5
24.7
22.4
660
107
-50
-0.5
-50
-130
-125
-230
-295
-1000
-950
500
400
40
V I_E = -100µA
nA V_CB = -110V
µA V_CB = -110V, T_amb=100°C
nA V_EB = -5.6V
mV _{IC = -0.5A, IB = -20mA}^(*)
mV _{IC = -1A, IB = -100mA}^(*)
mV I_C = -1A, I_B = -50mA^(*)
mV I_C = -2A, I_B = -200mA^(*)
mV _{IC = -2A, IB = -200mA}^(*)
mV _{IC = -2A, VCE = -2V}^(*)
MHz
pF
pF
ns
ns
ns
ns
I_C = -100mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -2A, V_CE = -2V^(*)
I_C = -100mA, V_CE = -10V
f = 50MHz
V_EB = -0.5V, f = 1MHz^(*)
V_CB = -10V, f = 1MHz^(*)
I_C = -500mA, V_CC = -10V,
I_B1 = -I_B2 = -50mA
R_b =100Ω, R_c =20Ω
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1- February 2008
4
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