ZXTP19100CG Datasheet, PDF (3/8 Pages) Zetex Semiconductors – 100V PNP medium transistor

Thermal characteristics
ZXTP19100CG
V
Limited
CE(sat)
see note (c)
1
DC
1s
100m
100ms
10ms
Single Pulse
10m
T =25°C
amb
100m
1
1ms
100µs
10
100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1m
100µ
10µ
BV
=100V
(BR)CEO
Failure may occur
in this region
1µ
BV
=110V
(BR)CEX
T =25°C
amb
90
100
110
120
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
40
T =25°C
amb
see note (c)
30
D=0.5
20
10
D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
100
10
Single Pulse
T =25°C
amb
see note (c)
1
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
3.0
2.5
see note (c)
2.0
1.5
see note (b)
1.0
0.5
0.0
0
see note (a)
20
40
60
80 100 120 140 160
Temperature (°C)
Derating Curve
Issue 1- February 2008
3
© Zetex Semiconductors plc 2008
www.zetex.com