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| ZXTP03200BZ Datasheet, PDF (4/7 Pages) Zetex Semiconductors – 200V PNP Low VCE(sat) transistor | |||
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A Product Line of
Diodes Incorporated
ZXTP03200BZ
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note f)
Emitter-Base Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
Min
-220
-220
-220
-7
Collector-Base Cutoff Current
ICBO
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note f)
IEBO
100
hFE
100
20
Collector-Emitter Saturation Voltage (Note f)
VCE(SAT)
Base-Emitter Saturation Voltage (Note f)
Base-Emitter Turn-On Voltage (Note f)
Output Capacitance (Note f)
VBE(sat)
VBE(ON)
Cobo
Transition Frequency
fT
Delay Time
td
Rise Time
tr
Storage Time
Ts
Fall Time
Tf
Notes: f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ⤠2%
Typ
-245
-245
-225
-8.4
<1
<1
195
179
50
5
-37
-120
-130
-160
-940
-840
31
105
21
18
680
75
Max
-50
-0.5
-10
300
-50
-155
-160
-260
-1100
-1000
Unit
V
V
V
V
nA
µA
ï nA
mV
mV
mV
mV
mV
mV
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -1µA, RBE ⤠1kâ¦
IC = -10mA
IE = -100µA
VCB = -200V
VCB = -200V, Tamb = 100°C
VEB = -6V
IC = -10mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
IC = -5A, VCE = -5V
IC = -100mA, IB = -10mA
IC = -500mA, IB = -25mA
IC = -1A, IB = -100mA
IC = -2A, IB = -400mA
IC = -2A, IB = -400mV
IC = -2A, VCE = -5V
VCB = -10V. f = 1MHz
VCE = -10V, IC = -100mA
f = 50MHz
VCC = -50V, IC = -1A
IB1 = -IB2 = -100mA
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
4 of 7
www.diodes.com
August 2009
© Diodes Incorporated
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