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ZXTP03200BZ Datasheet, PDF (2/7 Pages) Zetex Semiconductors – 200V PNP Low VCE(sat) transistor
A Product Line of
Diodes Incorporated
ZXTP03200BZ
200V PNP LOW VCE(sat) TRANSISTOR IN SOT-89
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note a)
Base Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
IB
ICM
Value
-220
-200
-7
-2
-1
-5
Unit
V
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation at TA = 25°C (Note a)
Linear derating factor
Power Dissipation at TA = 25°C (Note b)
Linear derating factor
Power Dissipation at TA = 25°C (Note c)
Linear derating factor
Power Dissipation at TA = 25°C (Note d)
Linear derating factor
Power Dissipation at TA = 25°C (Note e)
Linear derating factor
Junction to Ambient (Note a)
Junction to Ambient (Note b)
Junction to Ambient (Note c)
Junction to Ambient (Note d)
Junction to Lead (Note e)
Operating and Storage Temperature Range
Symbol
PD
PD
PD
PD
PD
RθJA
RθJA
RθJA
RθJA
RθJL
TJ, TSTG
Value
1.1
8.8
1.8
14.4
2.4
19.2
4.46
35.7
38.7
309.6
117
68
51
28
3.23
-55 to +150
Unit
W
mW /°C
W
mW /°C
W
mW /°C
W
mW /°C
W
mW /°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C
Notes:
a. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
b. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
c. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions.
d. As (c) above measured at t<5 seconds
e. Junction to lead from collector Tab. Typical
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
2 of 7
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August 2009
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