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| ZXTN649F Datasheet, PDF (4/7 Pages) Diodes Incorporated – NPN LOW VCE(sat) TRANSISTOR IN SOT-23 | |||
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A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW VCE(sat) TRANSISTOR IN SOT-23
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
35
25
7
Collector Cutoff Current
ICBO
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 5)
IEBO
200
hFE
175
155
50
Collector-Emitter Saturation Voltage (Note 5)
VCE(sat)
Base-Emitter Turn-On Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
VBE(on)
VBE(sat)
Notes: 5. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
Typ Max
110
35
8.1
<1
50
0.5
<1
50
320 500
280
250
85
70
120
200 300
780 850
900 1000
Unit
V
V
V
nA
µA
ï nA
mV
mV
mV
mV
Test Condition
IC = 100 µA
IC = 10 mA
IE = 100 µA
VCB = 28V
VCB = 28V, Tamb=100 °C
VEB = 5.6V
IC = 100mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC =1A, IB = 100mV
IC = 3A, IB = 300mV
IC = 1A, VCE = 2V
IC = 1A, IB = 100mV
ZXTN649F
Document Number DS31900 Rev. 2 - 2
4 of 7
www.diodes.com
October 2009
© Diodes Incorporated
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