ZXTN649F Datasheet, PDF (2/7 Pages) Diodes Incorporated – NPN LOW VCE(sat) TRANSISTOR IN SOT-23

A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW V_CE(sat) TRANSISTOR IN SOT-23
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 3)
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
35
25
7
3
6
500
Unit
V
V
V
A
A
mA
Thermal Characteristics
Characteristic
Power Dissipation at T_A = 25°C (Note 4)
Thermal Resistance, Junction to Ambient (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Lead @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
725
172
79
-55 to +150
Unit
mW
°C/W
°C/W
°C
Notes:
3. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
4. For device mounted on FR4 PCB measured at t ≤ 2 Secs.
ZXTN649F
Document Number DS31900 Rev. 2 - 2
2 of 7
www.diodes.com
October 2009
© Diodes Incorporated