ZXTN619MA_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 50V NPN LOW SATURATION TRANSISTOR

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Diodes Incorporated
ZXTN619MA
Electrical Characteristics (@TA = +25°C, unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
Min Typ Max
100 190
-
50
65
-
7
8.2
-
-
-
100
-
-
100
-
-
100
200 400
-
300 450
-
200 400
-
100 225
-
-
40
-
Collector-Emitter Saturation Voltage (Note 9)
-
-
VCE(sat)
-
-
-
-
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
100
Turn-On Time
Turn-Off Time
ton
-
toff
-
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
10
70
145
115
225
270
0.94
1.00
12
165
170
750
20
100
200
220
300
320
1.00
1.07
20
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = 100 µA
IC = 10 mA
IE = 100 µA
VCB = 80V
VEB = 6V
VCES = 40V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 6A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 1A, IB = 50mA
IC = 1A, IB = 10mA
IC = 2A, IB = 50mA
IC = 3A, IB = 100mA
IC = 4A, IB = 200mA
IC = 4A, VCE = 2V
IC = 4A, IB = 200mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA
ZXTN619MA
Document Number DS31892 Rev. 7 - 2
4 of 7
www.diodes.com
December 2014
© Diodes Incorporated