ZXTN619MA_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 50V NPN LOW SATURATION TRANSISTOR

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Diodes Incorporated
ZXTN619MA
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Parameter
Continuous Collector Current
Base Current
(Note 5)
(Note 6)
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Limit
100
50
7
6
4
4.3
1
Unit
V
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Power Dissipation
Linear Derating Factor
(Note 5)
PD
(Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
R_JA
R_JL
TJ, TSTG
Value
1.5
12
2.45
19.6
83
51
16.8
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the exposed collector pad on 31mm x 31mm (10cm²) 1oz copper that is on a single sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the device is measured at t ≤ 5 sec.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN619MA
Document Number DS31892 Rev. 7 - 2
2 of 7
www.diodes.com
December 2014
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