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| ZXTN25040DFH_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
ZXTN25040DFH
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-emitter breakdown voltage
(forward blocking)
Collector-Emitter Breakdown Voltage
(base open) (Note 9)
Emitter-Base Breakdown Voltage
Emitter-collector breakdown voltage
(reverse blocking)
Emitter-collector breakdown voltage
(base open)
Symbol
Min
BVCBO
130
BVCEX
130
BVCEO
40
BVEBO
7
BVECX
6
BVECO
6
Collector-base Cut-off Current
ICBO
-
Collector-emitter Cut-off Current
Emitter-base Cut-off Current
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio
ICEX
-
IEBO
-
300
hFE
300
30
-
Collector-Emitter Saturation Voltage
VCE(sat)
-
Base-Emitter Saturation Voltage
VBE(sat)
-
Base-Emitter On Voltage
VBE(on)
-
SMALL SIGNAL CHARACTERISTICS (Note 9)
Transition Frequency
fT
-
Collector Output Capacitance
Delay time
Rise time
Storage time
Fall time
Cobo
-
td
-
tr
-
ts
-
tf
-
Notes: 9. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
Typ Max
170
-
170
-
63
-
8.3
-
7.4
-
7.4
-
<1
50
-
20
-
100
<1
50
450 900
450
-
60
-
10
-
45
55
120 210
135 210
140 190
960 1050
840 950
190
-
11.7
20
64
-
108
-
428
-
130
-
Unit
Test Condition
V
IC = 100µA
V
IC = 100µA; RBE < 1k⦠or
-1V < VBE < 0.25V
V
IC = 10mA
V
IE = 100µA
V
IE = 100µA; RBC < 1k⦠or
-0.25V < VBC < 0.25V
V
IE = 100µA;
nA VCB = 100V
µA VCB = 100V, TA = 100°C
nA
VCE = 100V; RBE < 1k⦠or
-1V < VBE < 0.25V
nA VEB = 5.6V
IC = 10mA, VCE = 2V
-
IC = 1A, VCE = 2V
IC = 4A, VCE = 2V
IC = 10A, VCE = 2V
IC = 1A, IB = 100mA
mV IC = 1A, IB = 10mA
IC = 2A, IB = 40mA
IC = 4A, IB = 400mA
mV IC = 4A, IB = 400mA
mV IC = 4A, VCE = 2V
MHz
pF
ns
ns
ns
ns
IC = 50mA, VCE = 10V,
f = 100MHz
VCB = 10V, f = 1MHz
VCC = 10V,
IC = 1A,
IB1 = IB2 = 10mA
ZXTN25040DFH
Document number: DS33697 Rev. 2 - 2
4 of 7
www.diodes.com
January 2012
© Diodes Incorporated
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