ZXTN25040DFH_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23

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Diodes Incorporated
ZXTN25040DFH
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V_CBO
130
V
Collector-Emitter Voltage (Forward Blocking)
V_CEX
130
V
Collector-Emitter Voltage
V_CEO
40
V
Emitter-Collector Voltage (Reverse Blocking)
V_ECO
6
V
Emitter-Base Voltage
V_EBO
7
V
Continuous Collector Current
(Note 6)
I_C
4
A
Peak Pulse Current
I_CM
10
A
Base Current
I_B
1
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
P_D
-
R_θJA
R_θJL
T_J, T_STG
Value
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
171
119
100
69
74.95
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
Notes:
4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. As note 6 above, measured at t < 5 seconds
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTN25040DFH
Document number: DS33697 Rev. 2 - 2
2 of 7
www.diodes.com
January 2012
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