ZXTN25040DFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 40V, SOT23, NPN medium power transistor

ZXTN25040DFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown BV_CEX
voltage (forward blocking)
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Emitter-collector breakdown BV_ECX
voltage (reverse blocking)
Emitter-collector breakdown BV_ECO
voltage (base open)
Min.
130
130
40
7
6
6
Typ. Max. Unit Conditions
170
V I_C = 100␮A
170
V I_C = 100␮A; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
63
V _{IC = 10mA} ^(*)
8.3
V I_E = 100␮A
7.4
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
7.4
V I_E = 100␮A,
Collector-base cut-off current I_CBO
Collector-emitter cut-off
I_CEX
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
<1
50
nA V_CB = 100V
20
␮A _{VCB = 100V, Tamb= 100°C}
-
100 nA V_CE = 100V; R_BE < 1k⍀
or
-1V < V_BE < 0.25V
<1
50
nA V_EB = 5.6V
45
55 mV _{IC = 1A, IB = 100mA}^(*)
120 210 mV _{IC = 1A, IB = 10mA}^(*)
135 210 mV _{IC = 2A, IB = 40mA}^(*)
140 190 mV _{IC = 4A, IB = 400mA}^(*)
960 1050 mV _{IC = 4A, IB = 400mA}^(*)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
f_T
840 950 mV _{IC = 4A, VCE = 2V}^(*)
300 450 900
I_C = 10mA, V_CE = 2V^(*)
300 450
I_C = 1A, V_CE = 2V^(*)
30 60
I_C = 4A, V_CE = 2V^(*)
10
I_C = 10A, V_CE = 2V^(*)
190
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_OBO
t_d
t_r
t_s
t_f
11.7 20
64
108
428
130
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V,
ns ^IC ^{= 1A,}
ns ^{IB1 = IB2= 10mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - June 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com