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ZXTN25040DFH Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 40V, SOT23, NPN medium power transistor
ZXTN25040DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(c)
Base current
Peak pulse current
Power dissipation at Tamb = 25°C(a)
Linear derating factor
Power dissipation at Tamb = 25°C(b)
Linear derating factor
Power dissipation at Tamb = 25°C(c)
Linear derating factor
Power dissipation at Tamb = 25°C(d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
P
Limit
130
130
40
6
7
4
1
10
0.73
Unit
V
V
V
V
V
A
A
A
W
PD
PD
PD
Tj, Tstg
5.84
mW/°C
1.05
W
8.4
mW/°C
1.25
W
9.6
mW/°C
1.81
W
14.5
- 55 to 150
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
R⍜JA
R⍜JA
R⍜JA
R⍜JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - June 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com