ZXTN25020DG Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V NPN high gain transistor

ZXTN25020DG
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Symbol
BV_CBO
BV_CEX
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_CEO
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
BV_ECO
BV_EBO
Min.
100
100
20
6
5
7
Typ.
125
120
35
8.3
6.1
8.35
Max.
Unit Conditions
V I_C = 100␮A
V I_C = 100␮A, R_BE < 1kΩ
or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A, R_BC < 1kΩ
or
0.25V > V_BC > -0.25V
V I_E = 100␮A
V I_E = 100␮A
Collector-Base cut-off
current
Collector-Emitter cut-off
current
I_CBO
I_CEX
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Base-Emitter saturation
voltage
V_BE(sat)
<1
50
0.5
100
<1
40
60
100
130
225
1090
50
48
75
120
180
290
1150
nA V_CB = 100V
␮A _{VCB = 100V, Tamb= 100°C}
nA V_CE = 100V, R_BE < 1kΩ
or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 20mA}^(*)
mV I_C = 2A, I_B = 40mA^(*)
mV I_C = 2A, I_B = 20mA^(*)
mV I_C = 7A, I_B = 700mA^(*)
mV _{IC = 7A, IB = 700mA}^(*)
Base-Emitter turn-on
voltage
V_BE(on)
950 1050 mV _{IC = 7A, VCE = 2V}^(*)
Static forward current
h_FE
transfer ratio
Transition frequency
f_T
300 450 900
250 360
50
85
15
I_C = 10mA, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
I_C = 7A, V_CE = 2V^(*)
I_C = 15A, V_CE = 2V^(*)
215
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
152
16.5 25
67.7
72.2
361
63.9
pF _{VEB = 0.5V, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns
ns ^IC ^{= 1A, V}CC ^{= 10V,}
ns ^{IB1 = -IB2 = 10mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1 - January 2008
4
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