ZXTN25020DG Datasheet, PDF (3/6 Pages) Zetex Semiconductors – 20V NPN high gain transistor

Thermal characteristics
ZXTN25020DG
V
CE(sat)
10 _Limit
DC
1
1s
100m
100ms
10ms _1ms
Single Pulse. T =25°C
amb
100µs
See note (c)
10m
100m
1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1m
100µ
10µ
Failure may occur in this region
BV
= 20V
BR(CEO)
1µ
100n
0
BV
= 100V
BR(CEV)
20
40
60
80 100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
40 See note (c)
30
D=0.5
20
D=0.2
10
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
See note (c)
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
3.0
See note (c)
2.5
2.0
See note (b)
1.5
1.0
0.5 ^{See note (a)}
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
Issue 1 - January 2008
3
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