ZXTN2007G_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTN2007G
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_CER
RՅ1k⍀
I_EBO
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
h_FE
f_T
80 125
V I_C=100␮A
80 125
V I_C=1␮A, RBՅ1k⍀
30 40
V I_C=10mA*
7
8.1
V I_E=100␮A
50 nA V_CB=70V
0.5 ␮A V_CB=70V, T_amb=100ЊC
100 nA V_CB=70V
0.5 ␮A V_CB=70V, T_amb=100ЊC
10 nA V_EB=6V
25
35 mV I_C=0.5A, I_B=20mA*
35
50 mV I_C=1A, I_B=100mA*
50
65 mV I_C=1A, I_B=20mA*
100 125 mV I_C=2A, I_B=20mA*
185 220 mV I_C=6.5A, I_B=300mA*
1025 1130 mV I_C=6.5A, I_B=300mA*
920 1000 mV I_C=6.5A, V_CE=1V*
100 175
I_C=10mA, V_CE=1V*
100 200 300
I_C=1A, V_CE=1V*
100 150
I_C=7A, V_CE=1V*
20
30
I_C=20A, V_CE=1V*
140
MHz I_C=100mA, V_CE=10V
f=50MHz
Output capacitance
Switching times
C_OBO
t_ON
t_OFF
48
pF V_CB=10V, f=1MHz*
37
ns I_C=1A, V_CC=10V,
425
I_B1=-I_B2=100mA
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
SEMICONDUCTORS
4
ISSUE 2 - MAY 2006