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| ZXTN2007G_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 | |||
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ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 30V : RSAT = 28m ; IC = 7A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
⢠Extemely low equivalent on-resistance; RSAT = 28m at 6.5A
⢠7 amps continuous current
⢠Up to 20 amps peak current
⢠Very low saturation voltages
⢠Excellent hFE characteristics up to 20 amps
APPLICATIONS
⢠DC - DC converters
⢠MOSFET gate drivers
⢠Charging circuits
⢠Power switches
⢠Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
ZXTN2007GTA
ZXTN2007GTC
7â
12mm
13"
embossed
QUANTITY PER
REEL
1,000 units
4,000 units
SOT223
PINOUT
DEVICE MARKING
ZXTN
2007
ISSUE 2 - MAY 2006
TOP VIEW
1
SEMICONDUCTORS
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