ZXTN2005G_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 25V NPN LOW SATURATION TRANSISTOR IN SOT223

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
Symbol Min
Typ
BVCBO
60
120
BVCER
60
120
BVCEO
25
35
BVEBO
7.0
8.1
ICBO
—
—
<1
—
ICER
—
<1
R≤1kΩ
—
—
IEBO
—
<1
28
35
VCE(sat)
—
55
115
195
VBE(sat)
—
980
VBE(on)
—
890
300
400
hFE
300
200
450
275
40
55
Transition Frequency
fT
—
150
Output Capacitance (Note 9)
Switching Times
Cobo
—
48
tON
—
33
tOFF
—
464
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
A Product Line of
Diodes Incorporated
ZXTN2005G
Max
—
—
—
—
50
0.5
100
0.5
10
40
50
75
140
230
1080
980
—
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
mV
mV
—
MHz
pF
ns
Test Condition
IC = 100µA
IC = 1µA, RB ≤ 1kΩ
IC = 10mA
IE = 100µA
VCB = 50V
VCB = 50V, TA = +100°C
VCB = 50V
VCB = 50V, TA = +100°C
VEB = 6V
IC = 500mA, IB = 10mA
IC = 1A, IB = 100mA
IC = 1A, IB = 10mA
IC = 2A, IB = 10mA
IC = 6.5A, IB = 150mA
IC = 6.5A, IB = 150mA
IC = 6.5A, VCE = 1V
IC = 10mA, VCE = 1V
IC = 1A, VCE = 1V
IC = 7A, VCE = 1V
IC = 20A, VCE = 1V
VCE = 10V, IC = 100mA,
f = 50MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 1A,
IB1 = -IB2 = 100mA
ZXTN2005G
Document number: DS33655 Rev. 5 - 2
4 of 7
www.diodes.com
May 2015
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