ZXTN2005G_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 25V NPN LOW SATURATION TRANSISTOR IN SOT223

Thermal Characteristics and Derating Information
A Product Line of
Diodes Incorporated
ZXTN2005G
V
10
CE(sat)
Limit
1
DC
1s
100m
100ms
10ms
Single Pulse. T_amb=25°C
1ms
50mmX50mm
Single Sided 2oz Cu
101m00m
1
100µs
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
3.0
2.5
50mmX50mm
Single Sided 2oz Cu
2.0
1.5
1.0
25mmX25mm
0.5
Single Sided 1oz Cu
0.00 _{20 40 60 80 100 120 140 160}
Temperature (°C)
Derating Curve
40
50mmX50mm
Single Sided 2oz Cu
30
D=0.5
20
D=0.2
10
1000µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100
10
Single Pulse. T =25°C
amb
50mmX50mm
Single Sided 2oz Cu
1010µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN2005G
Document number: DS33655 Rev. 5 - 2
3 of 7
www.diodes.com
May 2015
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