ZXTN19100CG_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTN19100CG
Electrical Characteristics (@TA = +25°C, unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-on Voltage (Note 9)
DC Current Gain (Note 9)
Symbol Min
BVCBO 200
BVCEO 100
BVECO
5
BVEBO
7
ICBO
—
—
ICEX
—
IEBO
—
—
VCE(sat)
—
—
VBE(sat)
—
VBE(on)
—
200
hFE
130
Typ
240
120
8
8.3
<1
—
—
<1
50
110
245
1.005
0.95
300
190
25
Transition Frequency
fT
—
Input Capacitance
Output Capacitance (Note 9)
Switching Times
CIBO
—
COBO
—
tON
—
tOFF
—
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
150
305
15.7
51.9
1,095
Max
—
—
—
—
50
0.5
100
50
65
140
430
1.1
1.05
500
—
400
25
—
—
Unit
V
V
V
V
nA
µA
nA
nA
mV
V
V
MHz
pF
pF
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
IE = 100µA
VCB = 200V
VCB = 200V, TA = +100°C
VCB = 200V, RBE < 1kΩ
VEB = 5.6V
IC = 1A, IB = 100mA
IC = 1A, IB = 20mA
IC = 5.5A, IB = 550mA
IC = 5.5A, IB = 550mA
IC = 5.5A, VCE = 2V
IC = 100mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 5.5A, VCE = 2V
VCE = 10V, IC = 50mA,
f = 50MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 500mA,
IB1 = -IB2 = 50mA
ZXTN19100CG
Document number: DS33684 Rev. 2 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated