ZXTN19100CG_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

Thermal Characteristics and Derating Information
ZXTN19100CG
V
CE(sat)
10 _Limit
1
DC
1s
100m
100ms 10ms _1ms
Single Pulse. T =25°C
amb
50mm x 50mm 2oz
10m
100µs
100m
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1m
100µ
10µ
Failure may occur
in this region
BV
= 100V
BR(CEO)
1µ
BV
= 200V
BR(CEX)
100n
0
20 40 60 80 100 120 140 160 180 200 220
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
40 _{50mm x 50mm 2oz}
30
D=0.5
20
D=0.2
10
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
50mm x 50mm 2oz
10
1
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
3.0
50mm x 50mm 2oz
2.5
2.0
25mm x 25mm 1oz
1.5
1.0
0.5 _{15mm x 15mm 1oz}
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
ZXTN19100CG
Document number: DS33684 Rev. 2 - 2
3 of 7
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November 2015
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