ZXTN19055DZ Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 55V, NPN medium power transistor

ZXTN19055DZ
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
BV_CBO
BV_CEX
BV_CEO
150 200
150 200
55 75
V I_C = 100mA
V I_C = 100mA, R_BE < 1k⍀ or
-1V < V_BE < +0.25V
V _{IC = 10mA} ^(*)
Emitter-base breakdown
voltage
Collector-base cut-off current
BV_EBO
I_CBO
Collector-emitter cut-off
current
Emitter cut-off current
Collector-emitter saturation
voltage
I_CEX
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
f_T
7 8.1
V IE = 100mA
<1 50 nA V_CB = 120V
20 ␮A V_CB = 120V, T_amb= 100°C
<1 100 nA V_CE = 120V; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
<1 50 nA V_EB = 5.6V
25
40 mV _{IC = 0.5A, IB = 50mA}^(*)
45
70 mV _{IC = 1A, IB = 50mA}^(*)
40
60 mV _{IC = 1A, IB = 100mA}^(*)
200 350 mV _{IC = 2A, IB = 20mA}^(*)
110 140 mV _{IC = 2A, IB = 40mA}^(*)
140 200 mV _{IC = 4A, IB = 200mA}^(*)
170 250 mV _{IC = 6A, IB = 600mA}^(*)
800 900 mV _{IC = 2A, IB = 20mA}^(*)
1000 1150 mV _{IC = 6A, IB = 600mA}^(*)
760 900 mV _{IC = 2A, VCE = 2V}^(*)
900 1050 mV _{IC = 6A, VCE = 2V}^(*)
250 400 700
I_C = 10mA, V_CE = 2V^(*)
250 400
I_C = 1A, V_CE = 2V^(*)
180 300
I_C = 2A, V_CE = 2V^(*)
30 50
I_C = 6A, V_CE = 2V^(*)
20
I_C = 10A, V_CE = 2V^(*)
140 200
MHz I_C = 100mA, V_CE =10 V
f = 50MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_OBO
t_d
t_r
t_s
t_f
21.2 30
13.8
21.9
546
106
pF V_CB = 10V, f = 1MHz
V_CC = 10V,
I_C = 1A,
I_B1 = I_B2 = 100mA
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - June 2006
4
© Zetex Semiconductors plc 2006
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