ZXTN19055DZ Datasheet, PDF (2/6 Pages) Zetex Semiconductors – 55V, NPN medium power transistor

ZXTN19055DZ
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking voltage)
Collector-emitter voltage (base open)
Emitter-base voltage
Continuous collector current^(b)
Peak pulse current
Power dissipation at T_amb =25°C^(a)
Linear derating factor
Power dissipation at T_amb =25°C^(b)
Linear derating factor
Operating and storage temperature range
Symbol
V_CBO
V_CEX
V_CEO
V_EBO
I_C
I_CM
P_D
P_D
T_j, T_stg
Limit
150
150
55
7
6
10
1.5
12
2.1
16.8
-55 to +150
Unit
V
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient^(a)
Junction to ambient^(b)
Symbol
R_⍜JA
R_⍜JA
Limit
83
59
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - June 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com