ZXTN07045EFF_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F

A Product Line of
Diodes Incorporated
ZXTN07045EFF
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(base open) (Note 9)
Emitter-Base Breakdown Voltage
Emitter-collector breakdown voltage
(reverse blocking)
Emitter-collector breakdown voltage
(base open)
Symbol
Min
BV_CBO
45
BV_CEO
45
BV_EBO
7
BV_ECX
6
BV_ECO
6
Collector-base Cut-off Current
I_CBO
-
Emitter-base Cut-off Current
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio
I_EBO
-
500
h_FE
400
250
70
Collector-Emitter Saturation Voltage
V_CE(sat)
-
Base-Emitter Saturation Voltage
V_BE(sat)
-
Base-Emitter On Voltage
V_BE(on)
-
SMALL SIGNAL CHARACTERISTICS (Note 9)
Transition Frequency
f_T
150
Input Capacitance
Output Capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
-
C_obo
-
t_d
-
t_r
-
t_s
-
t_f
-
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typ Max
160
-
60
-
8.3
-
8.2
-
7.2
-
<1
50
-
20
<1
50
800
710
530
125
45
160
60
200
230
1000
875
1500
-
-
-
70
230
80
270
280
1100
1000
190
-
225
-
18.4
25
22.3
-
10.6
-
613
-
146
-
Unit
Test Condition
V
I_C = 100µA
V
I_C = 10mA
V
I_E = 100µA
V
I_E = 100µA; R_BC < 1kΩ or
-0.25V < V_BC < 0.25V
V
I_E = 100µA
nA VCB = 35V
µA V_CB = 35V, T_A = 100°C
nA V_EB = 5.6V
I_C = 100mA, V_CE = 2V
-
I_C = 1A, V_CE = 2V
I_C = 2A, V_CE = 2V
I_C = 4A, V_CE = 2V
I_C = 0.1A, I_B = 0.5mA
I_C = 1A, I_B = 5mA
mV I_C = 1A, I_B = 100mA
I_C = 2A, I_B = 20mA
I_C = 4A, I_B = 80mA
mV I_C = 4A, I_B = 80mA
mV I_C = 4A, V_CE = 2V
MHz
pF
pF
ns
ns
ns
ns
I_C = 50mA, V_CE = 5V,
f = 50MHz
V_EB = 0.5V, f = 1MHz
V_CB = 10V, f = 1MHz
V_CC = 10V,
I_C = 500mA,
I_B1 = I_B2 = 50mA
ZXTN07045EFF
Document number: DS33674 Rev. 4 - 2
4 of 7
www.diodes.com
February 2012
© Diodes Incorporated