ZXTN07045EFF_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F

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ZXTN07045EFF
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V_CBO
45
V
Collector-Emitter Voltage
V_CEO
45
V
Emitter-Collector Voltage (Reverse Blocking)
V_ECO
6
V
Emitter-Base Voltage
V_EBO
7
V
Continuous Collector Current
(Note 6)
I_C
4
A
Peak Pulse Current
I_CM
6
A
Base Current
I_B
1
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
P_D
-
R_θJA
R_θJL
T_J, T_STG
Value
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
149
93
83
60
43.77
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
Notes:
4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. As note 6 above, measured at t < 5 seconds
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTN07045EFF
Document number: DS33674 Rev. 4 - 2
2 of 7
www.diodes.com
February 2012
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