ZXTD09N50DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26

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Diodes Incorporated
ZXTD09N50DE6
Electrical Characteristics - Q1 & Q2 common (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
50
Collector-Emitter Breakdown Voltage (Note 13)
BVCEO
50
Emitter-Base Breakdown Voltage
BVEBO
7
Collector-Base Cut-Off Current
ICBO

Collector-Emitter Cut-Off Current
ICES

Emitter Cutoff Current
IEBO

DC Current Gain (Note 13)
200
300
hFE
200
75
20
Collector-Emitter Saturation Voltage (Note 13)
VCE(sat)

Base-Emitter Saturation Voltage (Note 13)
Base-Emitter Turn-On Voltage (Note 13)
Output Capacitance
VBE(sat)

VBE(on)

Cobo

Current Gain-Bandwidth Product
fT

Turn-On Time
Turn-Off Time
ton

toff

Note:
13. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Typ Max







10

10

10
420
450
350

130
60
24
35
60
80
120 200
160 270
940 1100
850 1100
10

215

150

425

Unit
V
V
V
nA
nA
nA

mV
mV
mV
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 40V
VCES = 40V
VEB = 5.6V
IC = 10mA, VCE = 2V
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 100mA, IB = 10mA
IC = 250mA, IB = 10mA
IC = 500mA, IB = 10mA
IC = 1A, IB = 50mA
IC = 1A, IB = 50mA
IC = 1A, VCE = 2V
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 100mA
ZXTD09N50DE6
Document number DS33650 Rev. 6 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated